US Patent Issued to International Business Machines on Sept. 8 for "Nanosheet transistor device with bottom isolation" (New York, California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,220, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanosheet transistor device with bottom isolation" was invented by Ruilong Xie (Niskayuna, N.Y.), Veeraraghavan S. Basker (Fremont, Calif.), Andrew M. Greene (Slingerlands, N.Y.) and Pietro Montanini (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a nanosheet transistor device is provided. The method includes forming a segment stack of alternating intermediate sacrificial segments and nanosheet segments on a bottom sacrificial segment, wherein the segment stack is on a mesa and a nanosheet template in on the segment stack. ...