US Patent Issued to International Business Machines on Sept. 8 for "Metal ferroelectric insulator metal stack in RRAM" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,412, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Metal ferroelectric insulator metal stack in RRAM" was invented by Takashi Ando (Eastchester, N.Y.), Reinaldo Vega (Mahopac, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.) and David Wolpert (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure that includes a dielectric stack of a ferroelectric dielectric layer and a paraelectric dielectric layer. At least the ferroelectric dielectric layer produces a negative capacitance to amplify an applied voltage. A thickness of the ferroelectric dielectric layer and the paraelect...