ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,252, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Gate contacts for semiconductor devices" was invented by Ruilong Xie (Niskayuna, N.Y.), Albert M. Chu (Nashua, N.H.), Dureseti Chidambarrao (Weston, Conn.) and Brent A. Anderson (Jericho, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate contact is formed within a gate cut region of a semiconductor structure to facilitate electrical routing. The gate contact includes a bottom portion extending within the gate cut region and adjoining a vertical end portion of a metal gate. A metal layer on the front side of the semiconductor structure includes sign...