US Patent Issued to International Business Machines on Sept. 22 for "Self-aligned litho-etch-litho-etch mandrel cut process for advanced FINFET interconnect" (New York Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,580, issued on Sept. 22, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned litho-etch-litho-etch mandrel cut process for advanced FINFET interconnect" was invented by Xiaoming Yang (Clifton Park, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device, includes providing a semiconductor structure having a dielectric stack and a mandrel layer positioned on the dielectric stack. An array of sacrificial mandrel features are patterned into the mandrel layer and on top of an insulating layer of the dielectric stack. A self-alig...