US Patent Issued to International Business Machines on Sept. 22 for "Field-effect transistor crescent-shaped dielectric isolation" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,434, issued on Sept. 22, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Field-effect transistor crescent-shaped dielectric isolation" was invented by Lijuan Zou (Slingerlands, N.Y.), Jay William Strane (Wappingers Falls, N.Y.), Junli Wang (Slingerlands, N.Y.), Brent A. Anderson (Jericho, Vt.), Ruilong Xie (Niskayuna, N.Y.) and Albert M. Chu (Nashua, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, system, and method of forming a crescent-shaped dielectric isolation layer for stacked field-effect transistors (FETs). The semiconductor structure may include a transistor including an epi. The semico...