US Patent Issued to International Business Machines on Sept. 1 for "Magnetic tunnel junction free layer of multiple materials" (New York, Connecticut Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,390, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magnetic tunnel junction free layer of multiple materials" was invented by Matthias Georg Gottwald (Ridgefield, Conn.), Guohan Hu (Yorktown Heights, N.Y.), John Bruley (Poughkeepsie, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic tunnel junction (MTJ) stack structure includes a reference layer; a tunnel barrier; and a free layer that comprises three distinct materials. All of the three distinct materials in the free layer are magnetic material. One of the three distinct materials in the free layer is a C3...