US Patent Issued to International Business Machines on Sept. 1 for "Backside diffusion break" (New York Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,243, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Backside diffusion break" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Sagarika Mukesh (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor integrated circuit (IC) device includes a diffusion break region that has a diffusion break dielectric adjacent to or between diffusion break isolation wall(s). The diffusion break region may separate adjacent transistors. The diffusion break isolation wall(s) may include respective retained portions of a backside spac...