ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,711, issued on Oct. 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked transistor structures with aligned cell boundaries and shifted channels" was invented by Shay Reboh (Guilderland, N.Y.), Ruilong Xie (Niskayuna, N.Y.), James P Mazza (Saratoga Springs, N.Y.), Shahrukh Khan (Sandy Hook, Conn.), Chen Zhang (Santa Clara, Calif.), Junli Wang (Slingerlands, N.Y.), Albert M. Chu (Nashua, N.H.) and Utkarsh Bajpai (Delmar, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first transistor and a second transistor vertically stacked over the first transistor. The first transistor and th...