US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Oct. 27 for "Nanosheet device with nitride isolation structures" (New York Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,689, issued on Oct. 27, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Nanosheet device with nitride isolation structures" was invented by Sagarika Mukesh (Albany, N.Y.), Alexander Reznicek (Troy, N.Y.) and Tsung-Sheng Kang (Ballston Lake, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more embodiments includes a semiconductor device. The semiconductor device includes: a first Gate-All-Around (GAA) field-effect transistor (FET) disposed on a silicon layer; and a second GAA FET disposed on the silicon layer adjacent to the first GAA FET. The semiconductor device also includes: an isolation layer disposed within the...