US Patent Issued to International Business Machines on Nov. 3 for "Semiconductor device with lateral diodes and stacked FETs" (Vermont, California, New York, Connecticut Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,421, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor device with lateral diodes and stacked FETs" was invented by Chen Zhang (Santa Clara, Calif.), Ruilong Xie (Niskayuna, N.Y.), Terence B. Hook (Jericho Center, Vt.), Lei Zhuang (Ridgefield, Conn.) and Junli Wang (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a stacked field effect transistor (FET) formed on a substrate and connected to a backside metal line of a backside power distribution network (BSPDN). The semiconductor device also includes a lateral ju...