US Patent Issued to International Business Machines on Nov. 3 for "Scanning single electron transistor having a plunger gate over fin" (Swiss Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,335, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Scanning single electron transistor having a plunger gate over fin" was invented by Chloe Bureau-Oxton (Adliswil, Switzerland), Armin Knoll (Adliswil, Switzerland) and Patrick Harvey-Collard (Adliswil, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure are directed to a side-gated fin field effect transistor configured as a scanning single electron transistor. In a non-limiting embodiment, a scanning single electron transistor includes a fin formed over a substrate. A source gate is formed over a first portion of...