US Patent Issued to International Business Machines on Nov. 3 for "Integration of different gate dielectrics nanosheet devices" (New York Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,361, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Integration of different gate dielectrics nanosheet devices" was invented by Ruqiang Bao (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first gate-all-around field effect transistor, which in turn includes an upper nanosheet and a first gate structure. The first gate structure is laterally confined by first gate spacers and surrounds the upper nanosheet. The first gate structure includes a first gate dielectric on the upper nanosheet and a u-shaped first high-k material on a lower portion of the first gat...