US Patent Issued to International Business Machines on May 26 for "Stacked FET structures with different gate dielectric compositions or thicknesses" (New York Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,828, issued on May 26, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked FET structures with different gate dielectric compositions or thicknesses" was invented by Ruqiang Bao (Niskayuna, N.Y.), Dechao Guo (Niskayuna, N.Y.) and Junli Wang (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Bonded stacked FETs with individually tunable gate dielectrics are provided. In one aspect, a stacked FET device includes: a bottom transistor disposed on a wafer; and a top transistor bonded on top of the bottom transistor via a bonding layer, where the bottom transistor includes a stack of first active layers, a first g...