US Patent Issued to International Business Machines on May 26 for "Shared source/drain contact for stacked field-effect transistor" (New York Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,844, issued on May 26, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Shared source/drain contact for stacked field-effect transistor" was invented by Ruilong Xie (Niskayuna, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Nicholas Alexander Polomoff (Hopewell Junction, N.Y.) and Leon Sigal (Monsey, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein include semiconductor structures that may include a first field-effect transistor (FET) comprising a first source/drain (S/D), a second FET comprising a second S/D squarely above the first S/D, and a shared S/D contact. The shared S/D may include a recessed portion...