US Patent Issued to International Business Machines on May 19 for "Stacked FET architecture with separate gate regions" (New York Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,236, issued on May 19, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked FET architecture with separate gate regions" was invented by Chen Zhang (Guilderland, N.Y.) and Tenko Yamashita (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked FET architecture includes isolated pockets for replacement metal gates for top and bottom nanosheet field-effect transistors. Different work function metals are employed for the metal gates of n-type and p-type FETs. The architecture allows flexibility in providing electrically connected or unconnected metal gates."

The patent was filed on July 5, 2022, under Appli...