US Patent Issued to International Business Machines on May 12 for "Vertical transistors having improved control of parasitic capacitance and gate-to-contact short circuits" (American, Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,367, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical transistors having improved control of parasitic capacitance and gate-to-contact short circuits" was invented by ChoongHyun Lee (Chigasaki, Japan), Ardasheir Rahman (Schenectady, N.Y.), Xin Miao (San Jose, Calif.), Brent A. Anderson (Jericho, Vt.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention are directed to a method of forming an integrated circuit (IC). The method includes performing fabrication operations that form the IC. The fabrication operations include forming a channel fin. A ...