US Patent Issued to International Business Machines on May 12 for "Nanosheet transistor with asymmetric junction and robust structure stability" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,375, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanosheet transistor with asymmetric junction and robust structure stability" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate; bottom dielectric isolation (BDI) on the substrate; a first source/drain region on the BDI; and a nanosheet stack on the BDI. The nanosheet stack includes gate stack layers; semiconductor nanosheets interleaved with the gate stack layers and ...