US Patent Issued to International Business Machines on May 12 for "Nanosheet stacks with dielectric isolation layers" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,390, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanosheet stacks with dielectric isolation layers" was invented by Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.) and Nicolas Jean Loubet (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises a first nanosheet stack comprising one or more first nanosheet channel layers and a first dielectric isolation layer over the one or more first nanosheet channel layers, a second nanosheet stack comprising one or more second nanosheet channel layers and a second dielectric isolation...