US Patent Issued to International Business Machines on May 12 for "Nanosheet FET with controlled overlay mark" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,389, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanosheet FET with controlled overlay mark" was invented by Min Gyu Sung (Latham, N.Y.), Susan Ng Emans (Albany, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Anton Tokranov (Halfmoon, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a nanosheet field effect transistor (FET), and an overlay mark adjacent to the nanosheet FET. The overlay mark includes a middle section, a first vertical spacer segment adjacent to a first end of the overlay mark, and a second vertical spacer segment adjacent to a secon...