ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,668, issued on March 31, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Shallow and deep contacts with stitching" was invented by Su Chen Fan (Cohoes, N.Y.), Stuart Sieg (Albany, N.Y.), Dominik Metzler (Clifton Park, N.Y.), Indira Seshadri (Niskayuna, N.Y.) and Junli Wang (Slingerlands, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes an interlayer dielectric layer; and a plurality of metal contacts formed in the interlayer dielectric layer. The plurality of metal contacts include a plurality of shallow metal contacts having a first depth, and a plurali...