US Patent Issued to International Business Machines on March 31 for "MRAM device with wrap-around top electrode contact" (New York, Utah Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,615, issued on March 31, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM device with wrap-around top electrode contact" was invented by Ashim Dutta (Clifton Park, N.Y.), Shravana Kumar Katakam (Lehi, Utah) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic tunnel junction (MTJ) stack, and a metallic encapsulation layer surrounding vertical side surfaces of the MTJ stack, electrically and physically connected to a top electrode of the MTJ stack. A magnetic tunnel junction (MTJ) stack, and a metallic encapsulation layer surrounding vertical side surfaces of the MTJ stack, electrica...