US Patent Issued to International Business Machines on March 3 for "Self-aligned backside trench epitaxy for low contact resistivity" (New York Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,661, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned backside trench epitaxy for low contact resistivity" was invented by Ruilong Xie (Niskayuna, N.Y.), Dechao Guo (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Oleg Gluschenkov (Tannersville, N.Y.) and Shogo Mochizuki (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first and a second nanosheet stack, a first source drain to the first nanosheet stack, a carrier wafer bonded to an upper surface, a bottom source drain contact located on a bottom surface of the first source drain, an epitaxial region between the bottom sourc...