US Patent Issued to International Business Machines on March 3 for "Profile engineering for deep trenches in a semiconductor device" (New York Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,650, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Profile engineering for deep trenches in a semiconductor device" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Daniel Schmidt (Niskayuna, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a gate cut isolation region composed of a top portion and a bottom portion. The top portion of the gate cut isolation region being at a first taper angle and the second portion being at a second taper angle different from the first taper angle. A change from t...