US Patent Issued to International Business Machines on March 3 for "MRAM with a multi-component, multi-layer bottom electrode" (Utah, New York Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,772, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM with a multi-component, multi-layer bottom electrode" was invented by Shravana Kumar Katakam (Lehi, Utah), Ashim Dutta (Clifton Park, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random access memory (MRAM) structure, a system, and a method of forming an MRAM structure. The MRAM structure may include a bottom electrode. The bottom electrode may include a diffusion barrier. The bottom electrode may further include a dielectric that surrounds one or more sidewalls of the diffusion barrier. Th...