ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,265, issued on March 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor structure with enhanced placeholder position margin" was invented by Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.) and Shogo Mochizuki (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure having improved placeholder position margin is provided. The semiconductor structure includes a backside source/drain contact structure contacting one source/drain region of a nanosheet transistor. The backside source/drain contact structure has a first portion and a secon...