US Patent Issued to International Business Machines on March 24 for "CMOS integration for doped placeholder as direct backside contact" (New York Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,266, issued on March 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"CMOS integration for doped placeholder as direct backside contact" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Nicolas Jean Loubet (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic structure includes a first nanosheet transistor that includes a first source/drain and a second source/drain. The first source/drain and the second source/drain are doped with a first material. A second nanosheet transistor that includes a third source/drain and fourth ...