ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,280, issued on March 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Backsides subtractive M1 patterning with backside contact repair for tight N2P space" was invented by Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Daniel Charles Edelstein (White Plains, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic structure including a first nanosheet transistor including a first backside metal line that has a first width as measure along a bottom surface of the first backside metal line and the fir...