US Patent Issued to International Business Machines on March 17 for "Common self aligned gate contact for stacked transistor structures" (New York Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,702, issued on March 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Common self aligned gate contact for stacked transistor structures" was invented by Su Chen Fan (Cohoes, N.Y.), Stuart Sieg (Albany, N.Y.), Xuan Liu (Clifton Park, N.Y.) and Junli Wang (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked semiconductor structure including a top transistor stacked above a bottom transistor, and a single gate contact in electrical contact with a top gate conductor of the top transistor and a bottom gate conductor of the bottom transistor."

The patent was filed on June 24, 2022, under Application No....