ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,723, issued on March 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Backside power via" was invented by Lijuan Zou (Slingerlands, N.Y.), Tao Li (Slingerlands, N.Y.), Feng Liu (Niskayuna, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention are directed to processing methods and resulting structures for providing power vias through a wafer backside. In a non-limiting embodiment of the invention, a gate and a source or drain (S/D) region are formed on a substrate. A bi-layer liner is formed in a gate cut of the gate. The bi-layer liner includes a first l...