US Patent Issued to International Business Machines on June 9 for "Multilayer work function metal in nanosheet stacks using a sacrificial oxide material" (American, Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,835, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Multilayer work function metal in nanosheet stacks using a sacrificial oxide material" was invented by Ruqiang Bao (Niskayuna, N.Y.), Koji Watanabe (Yokohama, Japan), Muthumanickam Sankarapandian (Niskayuna, N.Y.) and Jingyun Zhang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is formed using a nanosheet stack that is over a semiconductor substrate. The semiconductor structure includes multiple layers of work function that surround each channel of a plurality of channels in the nanosheet stack and are on the semicondu...