US Patent Issued to INTERNATIONAL BUSINESS MACHINES on June 23 for "Stacked hybrid TFET and MOSFET" (New York Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,711, issued on June 23, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Stacked hybrid TFET and MOSFET" was invented by Min Gyu Sung (Latham, N.Y.), Liqiao Qin (Albany, N.Y.), Julien Frougier (Albany, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to techniques of fabricating hybrid transistors that combine both TFETs and MOSFETs. The techniques may be commonly integrated such that TFET regions are formed in the same fabrication stages used to fabricate CMOS regions. The TFET and MOSFET may be stacked vertically to reduce the footprint area of the hybrid...