US Patent Issued to International Business Machines on June 23 for "Enabling anneal for reliability improvement and multi-VT with interfacial layer regrowth suppression" (New York Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,648, issued on June 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Enabling anneal for reliability improvement and multi-VT with interfacial layer regrowth suppression" was invented by Ruqiang Bao (Niskayuna, N.Y.) and Huiming Bu (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes forming an interfacial layer and a dielectric layer on a base structure and around channels of a first gate-all-around field-effect transistor (GAA FET) device within a first region and a second GAA FET device within a second region, forming at least a scavenging metal layer in ...