ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,675, issued on June 23, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Buried near-gate local interconnects and methods of their manufacture" was invented by Lawrence A. Clevenger (Saratoga Springs, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Benjamin D. Briggs (Waterford, N.Y.), Kisik Choi (Watervliet, N.Y.) and Brent A. Anderson (Jericho, Vt.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for fabricating a semiconductor device are provided. The method can include forming a conductive material layer on a semiconductor device, the semiconductor device including at least two gate structures and at least two s...