ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,178, issued on June 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Nanosheet replacement metal gate patterning scheme" was invented by Ruqiang Bao (Niskayuna, N.Y.), Jing Guo (Niskayuna, N.Y.), Junli Wang (Slingerlands, N.Y.) and Dechao Guo (Niskayuna, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a base layer structure including a first region and a second region; a first bottom gate material in a plurality of first-type doped regions in the first and second regions; a second bottom gate material in a second-type doped regions in the first and second regions; first nanosheet gate-all-round device st...