US Patent Issued to International Business Machines on June 2 for "Multiple gate dielectrics for monolithic stacked devices" (New York, California Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,194, issued on June 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Multiple gate dielectrics for monolithic stacked devices" was invented by Ruqiang Bao (Niskayuna, N.Y.), Jingyun Zhang (Albany, N.Y.), Junli Wang (Slingerlands, N.Y.), Chen Zhang (Santa Clara, Calif.) and Uzma Rana (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a plurality of stacked devices having different gate dielectrics is provided. The different gate dielectrics for the stacked devices are designed to improve the performance and the reliability for each of the stacked devices."

The patent was fil...