ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,507, issued on June 16, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Inverted wide base double magnetic tunnel junction device" was invented by Pouya Hashemi (Purchase, N.Y.), Daniel Charles Edelstein (White Plains, N.Y.) and Andrew Giannetta (Somers, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a double magnetic tunnel junction device includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a metallic ring layer on the sides of the spin conducting layer; and forming a second magnetic tunnel junction stack o...