US Patent Issued to International Business Machines on July 28 for "Semiconductor structure with two air gaps on two sides of a top source-drain middle-of-line contact via" (New York Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,516, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor structure with two air gaps on two sides of a top source-drain middle-of-line contact via" was invented by Liqiao Qin (Albany, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Jingyun Zhang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure that includes a top source/drain (S/D) middle-of-line (MOL) contact via including a first side and a second side. The semiconductor structure also includes a first air gap located adjacent the first side of the top S/D MOL contact via, and a second a...