US Patent Issued to International Business Machines on July 28 for "First and second nanosheet transistors having respective first and second channel structures wherein a second source/drain structure of the second nanosheet transistor wraps around the ends of the second channel structures" (New York Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,500, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"First and second nanosheet transistors having respective first and second channel structures wherein a second source/drain structure of the second nanosheet transistor wraps around the ends of the second channel structures" was invented by Ruilong Xie (Niskayuna, N.Y.), Tenko Yamashita (Schenectady, N.Y.), Teresa J. Wu (Rexford, N.Y.) and Chen Zhang (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; a first nanosheet transistor, which is located on the substrate, that has a first inter-channel spa...