US Patent Issued to International Business Machines on July 28 for "Composite contact between backside power element and source/drain region" (New York Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,745, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Composite contact between backside power element and source/drain region" was invented by Koichi Motoyama (Clifton Park, N.Y.), Alexander Reznicek (Troy, N.Y.), Tsung-Sheng Kang (Ballston Lake, N.Y.) and Oscar van der Straten (Guilderland Center, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor having a source/drain region and a contact disposed on the source/drain region. The semiconductor device further includes a via extending from the contact along a side of the source/drain region to a power element. The...