ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,459, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Backside MRAM with frontside devices" was invented by Brent A. Anderson (Jericho, Vt.), Theodorus E. Standaert (Clifton Park, N.Y.), Junli Wang (Slingerlands, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Albert M. Chu (Nashua, N.H.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same include a front-end-of-line (FEOL) layer that includes a first transistor device. A first back-end-of-line (BEOL) layer is on a front side of the FEOL layer and includes a first electri...