ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,186, issued on July 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Structure with frontside and backside DRAMs" was invented by Min Gyu Sung (Latham, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Chanro Park (Clifton Park, N.Y.) and Julien Frougier (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure having a high cell density is provided in which a frontside dynamic access memory (DRAM) is located on a frontside of a semiconductor substrate, and a backside DRAM is located on a backside of the semiconductor substrate. Peripheral transistors can be located on the...