US Patent Issued to INTERNATIONAL BUSINESS MACHINES on July 21 for "Deep backside power rail cut" (New York Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,244, issued on July 21, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Deep backside power rail cut" was invented by Liqiao Qin (Albany, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Jingyun Zhang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nanosheet semiconductor structure including a backside cut dielectric physically separating an NFET source drain region from a PFET source drain region, where a first portion of the backside cut dielectric contacts a source drain contact and a second portion of the backside cut dielectric contacts a gate."

The patent was filed on March 20, 2024, ...