ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,027, issued on July 14, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).
"MRAM structure with raised edge of tunnel barrier layer" was invented by Koichi Motoyama (Clifton Park, N.Y.), Oscar van der Straten (Guilderland Center, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a method of forming a MRAM structure. The method includes patterning a bottom electrode layer and a first ferromagnetic layer on top of the bottom electrode layer; depositing a dielectric layer, the dielectric layer covering the bottom electrode layer and the first ferromagnetic...