US Patent Issued to International Business Machines on July 14 for "Local interconnect formation at double diffusion break" (New York Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,135, issued on July 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Local interconnect formation at double diffusion break" was invented by Ruilong Xie (Niskayuna, N.Y.), Min Gyu Sung (Latham, N.Y.), Julien Frougier (Albany, N.Y.), Chanro Park (Clifton Park, N.Y.) and Kangguo Cheng (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic structure including a first nano device that includes a plurality of first transistors and a second nano device that includes a plurality of second transistors. The first nano device and the second nano device are parallel to each other. A double diffusion break ...