US Patent Issued to International Business Machines on July 14 for "Interconnect through gate cut for stacked FET device" (New York, Vermont Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,136, issued on July 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Interconnect through gate cut for stacked FET device" was invented by Ruilong Xie (Niskayuna, N.Y.), Albert M. Young (Fishkill, N.Y.), Brent A. Anderson (Jericho, Vt.), Julien Frougier (Albany, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic structure including a stacked device region, where stacked device region is comprised of a plurality of top devices and a plurality of bottom devices. Each of the plurality of top devices includes at least one top source/drain...