ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,747, issued on Feb. 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Three dimensional ReRAM device" was invented by Min Gyu Sung (Latham, N.Y.), Soon-Cheon Seo (Glenmont, N.Y.), Heng Wu (Santa Clara, Calif.), Julien Frougier (Albany, N.Y.), Chen Zhang (Guilderland, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory (ReRAM) device and a method for forming the device are provided. The ReRAM device includes a first electrode, a resistive switching element layer in contact with the first electrode, and a plurality of second electrodes in contact with the resis...