US Patent Issued to International Business Machines on Feb. 24 for "Stacked random-access-memory with complementary adjacent cells" (New Hampshire, New York, Vermont Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,715, issued on Feb. 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked random-access-memory with complementary adjacent cells" was invented by Brent A. Anderson (Jericho, Vt.), Albert M. Chu (Nashua, N.H.), Junli Wang (Slingerlands, N.Y.), Carl Radens (LaGrangeville, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor (FET) cell structure of an integrated circuit (IC) is provided. The FET cell structure includes first and second adjacent cells. Each of the first and second adjacent cells spans a first layer and a second layer. The second layer is vertically s...