ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,817, issued on Feb. 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Integrating gate-cuts and single diffusion break isolation post-RMG using low-temperature protective liners" was invented by Ruilong Xie (Niskayuna, N.Y.), Balasubramanian S. Pranatharthiharan (Santa Clara, Calif.), Stuart Sieg (Albany, N.Y.), Nelson Felix (Slingerlands, N.Y.) and Veeraraghavan S. Basker (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention are directed to a method of fabricating an integrated circuit (IC). The method includes performing fabrication operations to form transistors on a substrate. The...