ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,776, issued on Feb. 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Forming source/drain contact in a tight tip-to-tip space" was invented by Ruilong Xie (Niskayuna, N.Y.), Andrew Gaul (Halfmoon, N.Y.), Andrew M. Greene (Slingerlands, N.Y.) and Julien Frougier (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first transistor having a first source/drain region and a second transistor having a second source/drain region; a first source/drain contact around the first source/drain region and a second source/dr...