US Patent Issued to International Business Machines on Feb. 24 for "Extended lower source/drain for stacked field-effect transistor" (New York Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,796, issued on Feb. 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Extended lower source/drain for stacked field-effect transistor" was invented by Ruilong Xie (Niskayuna, N.Y.), Chen Zhang (Guilderland, N.Y.), Jingyun Zhang (Albany, N.Y.) and Pietro Montanini (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein include semiconductor structures with an active channel stack having an upper field-effect transistor (FET) and a lower FET vertically stacked below the upper FET The semiconductor structure may also include a dummy stub adjacent to the active channel stack, a lower source/drain (S/D) co...